罗切斯特理工电子器件招收2023春/秋全奖博士生 （新型存储器，新型计算，AI加速器）
9594
The NanoElectronic Devices and Systems (NEEDS) lab at Rochester Institute of Technology has several funded RA positions for graduate students. Interested and highly motivated students are encouraged to contact Dr. Kai Ni.
RIT has a state-of-the-art cleanroom facility that can support fabrication of various types of devices. In Dr. Ni’s group, they are designing electronic devices to solve the current pressing societal need in the high performance storage and computing. They are utilizing the novel materials, such as ferroelectric, resistive Switching, oxide thin-film, and phase transition materials, etc. to design new devices (ferroelectric FET, resistive RAM, thin-film transistor, etc.). They also explore their exciting applications to accelerate the deployment of Artificial Intelligence, transform the memory hierarchy, revolutionize computing paradigms, support quantum information processing, and safeguard human's space explorations.
Dr. Kai Ni received his B.S. degree in Electrical Engineering from University of Science and Technology of China in 2011, and Ph.D. degree of Electrical Engineering from Vanderbilt University in 2016. During his Ph.D., he worked with Prof. Ronald Schrimpf and Prof. Daniel Fleetwood for the reliability and radiation effects on advanced semiconductor devices. Since 2016, he was a postdoctoral associate at University of Notre Dame with Prof. Suman Datta. Dr. Ni has wide connections with leading industry companies (Intel, TSMC, Samsung, Globalfoundries, IMEC, etc.). He has published more than 80 papers in top conferences and journals, including more than 20 proceedings in IEDM & VLSI top device conferences, 2 papers in Nature Electronics, and several other top conferences and journals EDL, APL, TNS, IRPS, etc.
Students can join our group at flexible times, both fall and spring. Students with background in physics, materials, devices, circuits are welcome to apply.
Dr. Ni’s contact information:
Email: 1point3acres.com
Website: www(dot)needskai(dot)org
RIT has a state-of-the-art cleanroom facility that can support fabrication of various types of devices. In Dr. Ni’s group, they are designing electronic devices to solve the current pressing societal need in the high performance storage and computing. They are utilizing the novel materials, such as ferroelectric, resistive Switching, oxide thin-film, and phase transition materials, etc. to design new devices (ferroelectric FET, resistive RAM, thin-film transistor, etc.). They also explore their exciting applications to accelerate the deployment of Artificial Intelligence, transform the memory hierarchy, revolutionize computing paradigms, support quantum information processing, and safeguard human's space explorations.
Dr. Kai Ni received his B.S. degree in Electrical Engineering from University of Science and Technology of China in 2011, and Ph.D. degree of Electrical Engineering from Vanderbilt University in 2016. During his Ph.D., he worked with Prof. Ronald Schrimpf and Prof. Daniel Fleetwood for the reliability and radiation effects on advanced semiconductor devices. Since 2016, he was a postdoctoral associate at University of Notre Dame with Prof. Suman Datta. Dr. Ni has wide connections with leading industry companies (Intel, TSMC, Samsung, Globalfoundries, IMEC, etc.). He has published more than 80 papers in top conferences and journals, including more than 20 proceedings in IEDM & VLSI top device conferences, 2 papers in Nature Electronics, and several other top conferences and journals EDL, APL, TNS, IRPS, etc.
Students can join our group at flexible times, both fall and spring. Students with background in physics, materials, devices, circuits are welcome to apply.
Dr. Ni’s contact information:
Email: 1point3acres.com
Website: www(dot)needskai(dot)org
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